发明名称 Semiconductor chip package including voltage generation circuit with reduced power noise
摘要 A semiconductor chip package eliminates and minimizes a power noise generated from a voltage generation circuit in the semiconductor chip package includes an integrated circuit chip with a voltage generation circuit that receives an external voltage to generate a supply voltage to be used in an internal circuit and a connection terminal connected to an output node of the voltage generation circuit, and a mounting substrate including a noise eliminator electrically connected to the connection terminal to reduce a power noise of the supply voltage and a mounting substrate to mount the integrated circuit chip to package the integrated circuit chip as the semiconductor chip package.
申请公布号 US8933747(B2) 申请公布日期 2015.01.13
申请号 US201213617802 申请日期 2012.09.14
申请人 SAMSUNG Electronics Co., Ltd. 发明人 Kang SunWon;Kim Chiwook;Woo Hyun jeong;Hwang Sangjoon
分类号 G11C5/14;G05F3/00;H02M1/14;H01L23/64;G11C11/4074 主分类号 G11C5/14
代理机构 Ellsworth IP Group PLLC 代理人 Ellsworth IP Group PLLC
主权项 1. A semiconductor chip package comprising: an integrated circuit chip including a voltage generation circuit that receives an external voltage to generate a supply voltage greater than the external voltage to be used in an internal circuit and a connection terminal connected to an output node of the voltage generation circuit; and a mounting substrate including a noise eliminator electrically connected to the connection terminal to reduce a power noise of the supply voltage and to mount the integrated circuit chip to package the integrated circuit chip as the semiconductor chip package.
地址 Suwon-si KR