Semiconductor apparatus and method of fabrication for a semiconductor apparatus

摘要

The invention relates to a semiconductor apparatus and a method of fabrication for a semiconductor apparatus, whereby the semiconductor apparatus includes a semiconductor layer and a passivation layer arranged on a surface of the semiconductor layer and serving for passivating the semiconductor layer surface, whereby the passivation layer comprises a chemically passivating passivation sublayer and a field-effect-passivating passivation sublayer, which are arranged one above the other on the semiconductor layer surface.

主权项

1. A semiconductor apparatus comprising:
a semiconductor layer in the form of a wafer and a passivation layer arranged on a surface of the semiconductor layer and serving for passivating the semiconductor layer surface, wherein the passivation layer comprises a chemically passivating passivation sublayer and a field-effect-passivating passivation sublayer, which are arranged one above the other on the semiconductor layer surface; wherein the chemically passivating passivation sublayer directly adjoins the field-effect-passivating passivation sublayer without further intermediate layers being arranged therebetween and wherein: i) the field-effect-passivating passivation sublayer is substantially formed from a material having a negative surface charge density; and ii) a covering layer comprising silicon nitride applied on the passivation layer.