Method of applying a conversion means to an optoelectronic semiconductor chip and an optoelectronic component

摘要

A method of applying a conversion means to an optoelectronic semiconductor chip includes preparing the optoelectronic semiconductor chip having a main radiation face, preparing the conversion means, the conversion means being applied to a main carrier face of a carrier, arranging the conversion means such that it faces the main radiation face and has a spacing relative to the main radiation face, and releasing the conversion means from the carrier and applying the conversion means to the main radiation face by irradiation and heating of an absorber constituent of the conversion means and/or of a release layer located between the conversion means and the carrier with a pulsed laser radiation which passes through the carrier.

主权项

1. A method of applying a conversion means to an optoelectronic semiconductor chip comprising:
preparing the optoelectronic semiconductor chip having a main radiation face, preparing the conversion means, the conversion means being applied to a main carrier face of a carrier, arranging the conversion means such that it faces the main radiation face and has a spacing relative to the main radiation face, and releasing the conversion means from the carrier and applying the conversion means to the main radiation face by irradiation and heating of an additional constituent of the conversion means with a pulsed laser radiation which passes through the carrier, wherein the conversion means is applied to the main radiation face in at least two successive and at least partially overlapping plies of the same kind, in a direction away from the main radiation face, a concentration of the additional constituent in boundary regions of two adjacent plies is in each case different in comparison with core regions of the plies, and the additional constituent is present at least in the core regions of the plies and uniformly distributed in each of the core regions, the additional constituent is different from a conversion material for a change in wavelength of the radiation generated by the optoelectronic semiconductor chip during operation.