| 发明名称 | Semiconductor device with high voltage transistor | ||
| 摘要 | A semiconductor device may include a first transistor, a second transistor connected in series to the first transistor through a first junction, and a third transistor connected in series to the second transistor through a second junction. Here, a high voltage is supplied to one of the first and second junctions, and a turn-off voltage is supplied to a gate of the second transistor. | ||
| 申请公布号 | US8933493(B2) | 申请公布日期 | 2015.01.13 |
| 申请号 | US201313844929 | 申请日期 | 2013.03.16 |
| 申请人 | SK Hynix Inc. | 发明人 | Cha Jae-Yong |
| 分类号 | H01L29/76;H01L27/088;H01L21/8234 | 主分类号 | H01L29/76 |
| 代理机构 | IP & T Group LLP | 代理人 | IP & T Group LLP |
| 主权项 | 1. A semiconductor device comprising: a first transistor; a second transistor connected in series to the first transistor through a first junction; and a third transistor connected in series to the second transistor through a second junction, wherein a high voltage is supplied to one of the first and second junctions, and a turn-off voltage is supplied to a gate of the second transistor. | ||
| 地址 | Gyeonggi-do KR | ||