Inductively coupled plasma source with phase control

摘要

A plasma processing apparatus may include a process chamber having an interior processing volume; a first RF coil to couple RF energy into the processing volume; a second RF coil to couple RF energy into the processing volume, the second RF coil disposed coaxially with respect to the first RF coil; and a third RF coil to couple RF energy into the processing volume, the third RF coil disposed coaxially with respect to the first RF coil, wherein when RF current flows through the each of the RF coils, either the RF current flows out-of-phase through at least one of the RF coils with respect to at least another of the RF coils, or the phase of the RF current may be selectively controlled to be in-phase or out-of-phase in at least one of the RF coils with respect to at least another of the RF coils.

主权项

1. A plasma processing apparatus, comprising: a process chamber having an interior processing volume; a first RF coil disposed proximate the process chamber to couple RF energy into the processing volume; a second RF coil disposed proximate the process chamber to couple RF energy into the processing volume, the second RF coil disposed coaxially with respect to the first RF coil; and a third RF coil disposed proximate the process chamber to couple RF energy into the processing volume, the third RF coil disposed coaxially with respect to the first and second RF coils, wherein the plasma processing apparatus is configured such that, when RF current flows through the each of the RF coils, the RF current flows out-of-phase through at least one of the first, second or third RF coils with respect to at least another of the first, second or third RF coils, wherein the first RF coil is wound in a first direction and wherein at least one of the second or third RF coils is wound in a second direction opposite the first direction.