Semiconductor device for semiconductor package having through silicon vias of different heights

摘要

Provided is a semiconductor device. The semiconductor device may include a first semiconductor chip that includes a first through silicon via having a first protrusion height and a second through silicon via having a second protrusion height greater than the first protrusion height which are penetrating at least a portion of the first semiconductor chip, a second semiconductor chip may be electrically connected to the first through silicon via, and a third semiconductor chip may be electrically connected to the second through silicon via.

主权项

1. A semiconductor device comprising:
a first semiconductor chip including a first through silicon via and a second through silicon via, the first through silicon via having a first protrusion height and the second through silicon via having a second protrusion height different from the first protrusion height; a second semiconductor chip electrically connected to the first through silicon via; and a third semiconductor chip electrically connected to the second through silicon via, wherein the first and second through silicon vias extend below a lower surface of the first semiconductor chip, and wherein a space is formed between the first semiconductor chip and the second semiconductor chip and between the first semiconductor chip and the third semiconductor chip such that the first through silicon via extends into the space between the first semiconductor chip and the second semiconductor chip and the second through silicon via extends into the space between the first semiconductor chip and the third semiconductor chip.