发明名称 Array substrate for fringe field switching mode liquid crystal display device
摘要 A method of manufacturing an array substrate for an FFS mode LCD device includes forming a gate line, a gate electrode and a pixel electrode on a substrate; forming a gate insulating layer; forming a data line, source and drain electrodes, and a semiconductor layer on the gate insulating layer, the drain electrode overlapping the pixel electrode; forming a passivation layer on the data line, the source and drain electrodes; forming a contact hole exposing the drain electrode and the pixel electrode by patterning the passivation layer and the gate insulating layer; and forming a common electrode and a connection pattern on the passivation layer, wherein the common electrode includes bar-shaped openings and a hole corresponding to the contact hole, and the connection pattern is disposed in the hole, is spaced apart from the common electrode and contacts the drain electrode and the pixel.
申请公布号 US8933460(B2) 申请公布日期 2015.01.13
申请号 US201414302135 申请日期 2014.06.11
申请人 LG Display Co., Ltd. 发明人 Kim Jeong-Oh;Beak Jung-Sun
分类号 H01L27/14;H01L21/44;G02F1/133;G02F1/1343;H01L27/12;G02F1/1362;H01L29/417 主分类号 H01L27/14
代理机构 McKenna Long & Aldridge LLP 代理人 McKenna Long & Aldridge LLP
主权项 1. An array substrate for a fringe field switching mode liquid crystal display device, comprising a gate line and a gate electrode on a substrate including a pixel region defined thereon; a pixel electrode in the pixel region on the substrate; a gate insulating layer on the gate line, the gate electrode and the pixel electrode; a semiconductor layer, a data line, a source electrode and a drain electrode on the gate insulating layer, the semiconductor layer corresponding to the gate electrode, the data line crossing the gate line to define the pixel region, the source and drain electrodes spaced apart from each other over the semiconductor layer, the drain electrode overlapping the pixel electrode; a passivation layer on the data line, the source electrode and the drain electrode, wherein the passivation layer and the gate insulating layer has a contact hole exposing a top surface and a side surface of the drain electrode and the pixel electrode; and a common electrode and a connection pattern on the passivation layer, wherein the common electrode includes bar-shaped openings in the pixel region and a hole corresponding to the contact hole, and wherein the connection pattern is disposed in the hole, is spaced apart from the common electrode and directly contacts the top surface and side surface of the drain electrode and the pixel electrode.
地址 Seoul KR