发明名称 Light emitting device
摘要 A light emitting device 1 according to an embodiment includes a planar alumina substrate, a semiconductor light-emitting element mounted on the alumina substrate, and a phosphor layer. The phosphor layer includes a silicone resin layer provided to cover an upper surface and a side surface of the semiconductor light-emitting element and a phosphor emitting visible light by being excited with light emitted from the semiconductor light-emitting element. The phosphor is dispersed in the silicone resin layer. The alumina substrate has a water absorption rate of 5% or more and 60% or less, and an adhesion strength between the alumina substrate and the silicone resin layer is 1 N or more.
申请公布号 US8933475(B2) 申请公布日期 2015.01.13
申请号 US201213609726 申请日期 2012.09.11
申请人 Kabushiki Kaisha Toshiba;Toshiba Materials Co., Ltd. 发明人 Nakagawa Katsutoshi;Ooya Yasumasa;Funayama Yoshitaka;Usui Daichi
分类号 H01L33/50;H01L33/56;H01S5/022;H01L33/02;H01S5/00 主分类号 H01L33/50
代理机构 Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P. 代理人 Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
主权项 1. A light emitting device, comprising: a planar alumina substrate; a semiconductor light-emitting element mounted on the alumina substrate; a first silicone resin layer with transparency provided on the alumina substrate to cover an upper surface and a side surface of the semiconductor light-emitting element; and a phosphor layer including a second silicone resin layer provided on the alumina substrate to cover an outer surface of the first silicone resin layer, and a phosphor, dispersed in the second silicone resin layer, emitting visible light by being excited with light emitted from the semiconductor light-emitting element, wherein the alumina substrate has a water absorption rate of 5% or more and 60% or less, and each of an adhesion strength between the alumina substrate and the first silicone resin layer and an adhesion strength between the alumina substrate and the second silicone resin layer is 1 N or more, wherein the first silicone resin layer does not contain the phosphor, and is configured to inhibit absorption of the light emitted from the semiconductor light-emitting element, and wherein an external surface of the phosphor layer has a semispherical shape, a columnar shape, or an oval cylindrical shape so that the visible light is emitted from a whole external surface of the phosphor layer to an outside of the light emitting device.
地址 Tokyo JP
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