Semiconductor memory device and method of operating the same

摘要

A semiconductor memory device is operated by, inter alia: precharging a bit line, providing a first voltage to a coupling circuit for coupling the bit lines and cell strings of a plurality of memory cells, providing a program voltage to a selected word line coupled to a memory cell on which a program operation will be performed among the plurality of memory cells, providing a pass voltage to unselected word lines, providing a second voltage lower than the first voltage to the coupling circuit, discharging the bit line by loading program data, and providing a third voltage lower than the second voltage to the coupling circuit.

主权项

1. A method of operating the semiconductor memory device, comprising:
precharging a bit line; providing a first voltage to a drain select transistor for coupling the bit line and a cell string to precharge a channel of the cell string; providing a program voltage to a selected word line coupled to a memory cell on which a program operation is to be performed among the plurality of memory cells; providing a pass voltage to unselected word lines; providing a second voltage lower than the first voltage to the drain select transistor to increase a voltage of the channel; discharging the bit line by loading program data; and providing a third voltage lower than the second voltage to the drain select transistor to slowly discharge the channel.