| 发明名称 | Photodiode | ||
| 摘要 | A photodiode may include an anode, a cathode, a photoelectric conversion layer between the anode and the cathode, and a buffer layer between the photoelectric conversion layer and the anode. The buffer layer may have a dual-layered structure including an organic layer and an inorganic layer. | ||
| 申请公布号 | US8933438(B2) | 申请公布日期 | 2015.01.13 |
| 申请号 | US201213461250 | 申请日期 | 2012.05.01 |
| 申请人 | Samsung Electronics Co., Ltd. | 发明人 | Leem Dong-Seok;Kim Kyu Sik;Park Kyung Bae;Lee Kwang Hee;Lim Seon-Jeong |
| 分类号 | H01L51/50;H01L27/32;H01L51/56;H01L51/42 | 主分类号 | H01L51/50 |
| 代理机构 | Harness, Dickey & Pierce, P.L.C. | 代理人 | Harness, Dickey & Pierce, P.L.C. |
| 主权项 | 1. A photodiode comprising: an anode; a cathode; a photoelectric conversion layer between the anode and the cathode; and a buffer layer between the photoelectric conversion layer and the anode, the buffer layer having a dual-layered structure including an organic layer and an inorganic layer, wherein the organic layer is located closer to the anode than the inorganic layer, and wherein the organic layer contacts the anode. | ||
| 地址 | Gyeonggi-do KR | ||