Method and apparatus for forming a contact in a cell of a resistive random access memory to reduce a voltage required to program the cell

摘要

A cell of a resistive random access memory including a resistive element and an access device. The resistive element includes (i) a first electrode and (ii) a second electrode. The access device is configured to select and deselect the cell. The access device includes (i) a first terminal connected to a first contact and (i) a second terminal connected to a second contact. The second contact is connected to the second electrode of the resistive element via a third contact. The third contact includes (i) a first surface in contact with the second contact and (ii) a second surface in contact with the second electrode. The first surface defines a first surface area, and the second surface defines a second surface area. The first surface area is greater than the second surface area.

主权项

1. A cell of a resistive random access memory, the cell comprising:
a resistive element, wherein the resistive element includes (i) a first electrode and (ii) a second electrode; and an access device configured to select and deselect the cell, wherein the access device includes (i) a first terminal connected to a first contact and (i) a second terminal connected to a second contact, and wherein the second contact is connected to the second electrode of the resistive element via a third contact, wherein the third contact includes (i) a first surface in contact with the second contact and (ii) a second surface in contact with the second electrode, wherein (i) the first surface defines a first surface area and (ii) the second surface defines a second surface area, and wherein the first surface area is greater than the second surface area.