Three dimensional structure memory

摘要

A Three-Dimensional Structure (3DS) Memory allows for physical separation of the memory circuits and the control logic circuit onto different layers such that each layer may be separately optimized. One control logic circuit suffices for several memory circuits, reducing cost. Fabrication of 3DS memory involves thinning of the memory circuit to less than 50 μm in thickness and bonding the circuit to a circuit stack while still in wafer substrate form. Fine-grain high density inter-layer vertical bus connections are used. The 3DS memory manufacturing method enables several performance and physical size efficiencies, and is implemented with established semiconductor processing techniques.

主权项

1. An apparatus comprising:
a first integrated circuit having a thickness Th1; a second integrated circuit in a stacked relationship with and adjacent to the first integrated circuit having a thickness Th2; and hundreds of vertical interconnect segments interconnecting the first and second integrated circuits including a plurality of vertical interconnect segments having lengths of Th1+Th2 or less, wherein the plurality of vertical interconnect segments form interconnections only between a pair of adjacent integrated circuits; wherein at least one of the first integrated circuit and the second integrated circuit is thin and substantially flexible and comprises a thinned, substantially flexible monocrystalline semiconductor substrate of one piece made from a semiconductor wafer thinned from a backside thereof by at least one of abrasion, etching and parting, and subsequently polished or smoothed to form a polished or smoothed surface.