发明名称 |
Image sensor and method of fabricating the same |
摘要 |
An image sensor includes a substrate having a front side and a back side, an insulating structure containing circuits on the front side of the substrate, contact holes extending through the substrate to the circuits, respectively, and a plurality of pads disposed on the backside of the substrate, electrically connected to the circuits along conductive paths extending through the contact holes, and located directly over the circuits, respectively. The image sensor is fabricated by a process in which a conductive layer is formed on the back side of the substrate and patterned to form the pads directly over the circuits. |
申请公布号 |
US8933530(B2) |
申请公布日期 |
2015.01.13 |
申请号 |
US201213672035 |
申请日期 |
2012.11.08 |
申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
Kim Jin-Ho;Park Young-Hoon |
分类号 |
H01L27/146;H01L31/02;H01L31/0216;H01L31/0232 |
主分类号 |
H01L27/146 |
代理机构 |
Volentine & Whitt, PLLC |
代理人 |
Volentine & Whitt, PLLC |
主权项 |
1. An image sensor having a light receiving region and a circuit region extending around the light receiving region, and comprising:
a substrate having a front side and a back side; pixels disposed at the front side of the substrate in the light receiving region; a circuit-containing insulating structure comprising an insulating layer of electrical insulating material covering the front side of the substrate in both the circuit region and the light receiving region, and circuits configured to drive and deliver the output of the pixels, wherein the circuits reside exclusively within the insulating layer in the circuit region; and upper conductive pads on the back side of the substrate as vertically aligned with and electrically connected to the circuits, respectively, wherein the pixel sensors comprise photodetectors within the substrate. |
地址 |
Suwon-si, Gyeonggi-do KR |