Compound semiconductor device and manufacturing method of the same

摘要

An AlGaN/GaN.HEMT includes, a compound semiconductor lamination structure; a p-type semiconductor layer formed on the compound semiconductor lamination structure; and a gate electrode formed on the p-type semiconductor layer, in which Mg being an inert element of p-GaN is introduced into both sides of the gate electrode at the p-type semiconductor layer, and introduced portions of Mg are inactivated.

主权项

1. A compound semiconductor device, comprising:
a compound semiconductor lamination structure; a p-type semiconductor layer formed upward of the compound semiconductor lamination structure; and a gate electrode formed upward of the p-type semiconductor layer, wherein an inert element is introduced into portions of the p-type semiconductor layer on opposite sides of the gate electrode, causing the portions of the p-type semiconductor layer on opposite sides of the gate electrode to be inactivated, and resulting in the presence of a two-dimensional electron gas in regions of the compound semiconductor lamination structure that are below the portions of the p-type semiconductor layer on opposite sides of the gate electrode but not in a region of the compound semiconductor lamination structure that is below the gate electrode.