One-time programmable device

摘要

According to one embodiment, a one-time programmable (OTP) device having a lateral diffused metal-oxide-semiconductor (LDMOS) structure comprises a pass gate including a pass gate electrode and a pass gate dielectric, and a programming gate including a programming gate electrode and a programming gate dielectric. The programming gate is spaced from the pass gate by a drain extension region of the LDMOS structure. The LDMOS structure provides protection for the pass gate when a programming voltage for rupturing the programming gate dielectric is applied to the programming gate electrode. A method for producing such an OTP device comprises forming a drain extension region, fabricating a pass gate over a first portion of the drain extension region, and fabricating a programming gate over a second portion of the drain extension region.

主权项

1. A method for producing a one-time programmable (OTP) device having a lateral diffused metal-oxide-semiconductor (LDMOS) structure, said method comprising:
forming a drain extension region of said LDMOS structure; fabricating a pass gate including a pass gate electrode and a pass gate dielectric on a first portion of said drain extension region; and fabricating a programming gate including a programming gate electrode and a programming gate dielectric on a second portion of said drain extension region, wherein the programming gate is spaced from the pass gate based on two edges of the drain extension region; and said LDMOS device structure provides protection for said pass gate when a programming voltage for rupturing said programming gate dielectric is applied to said programming gate electrode.