| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a novel semiconductor device causing no nonuniformity of image. SOLUTION: The semiconductor device comprises a pixel matrix circuit having a first TFT, source signal line, gate signal line, a source signal line side driving circuit having an analog switch and a buffer both of which are directly connected to the source signal line, and a gate signal line side driving circuit having a buffer directly connected to the gate signal line. The buffer of the source signal line side driving circuit is constituted of a parallel combination of two or more buffers each having a second TFT, and the analog switch is constituted of a parallel combination of two or more analog switches each having a third TFT. The buffer of the gate signal line side driving circuit is constituted of a parallel combination of two or more buffer each having a fourth TFT. Semiconductor films of the first to fourth TFTs are crystallized by being second with linear laser. The second to fourth TFTs have the carriers moved in a direction oblique to the linear laser scanning direction.</p> |
