| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of reducing a serge voltage or parasitic voltage vibration (high frequency components) due to a parasitic inductance in a wiring pattern by a compact and light and inexpensive means while maintaining high speed switching performance. SOLUTION: This semiconductor device is provided with a heat sink having an upper and lower face, a first insulating member arranged on the upper face of the heat sink, a first wiring member arranged on the first insulating member, and a first semiconductor chip arranged on the first wiring member. Also, the first wiring member is provided with a main wiring part with low resistivity and a skin part with high resistivity and magnetic permeability for coating the surface of the main wiring part. Also, the first wiring member with a high resistance against high frequency components can be formed. |
