Apparatus for low-temperature epitaxy on a plurality semiconductor substrates

摘要

A reactor arrangement for layer deposition on a plurality of substrates (hereafter substrates) comprising a first reactor chamber for simultaneous cleaning the substrates, at least one second reactor chamber for depositing at least one layer on each of the substrates, a first heating device for setting the substrate temperature of the substrates in the first reactor chamber, a second heating device for setting the substrate temperature of the substrates in the second reactor chamber, a device for producing a gas atmosphere of predetermined composition and predetermined pressure, a transport device for transporting the substrates simultaneously from the first to the second reactor chamber, and a control device for controlling the heating devices and device for producing the gas atmosphere in such a way that the substrates are moved or stored in an interruption-free manner in a reducing gas atmosphere as long as the substrate temperature is above critical temperature Tc.

主权项

1. A reactor arrangement for layer deposition on a plurality of substrates comprising:
a first reactor chamber configured to carry out simultaneous cleaning of the plurality of substrates, at least one second reactor chamber configured to deposit at least one respective layer on each of the plurality of substrates, a first heating device configured to set a substrate temperature of the plurality of substrates in the first reactor chamber, a second heating device configured to set a substrate temperature of the plurality of substrates in the second reactor chamber, a device configured to produce a gas atmosphere of predetermined composition and predetermined pressure selectively in the first reactor chamber or in the second reactor chamber or in both reactor chambers, and a transport device configured to transport the plurality of substrates simultaneously from the first reactor chamber into the second reactor chamber, wherein transport of the plurality of substrates leads through a transport chamber with a non-reducing atmosphere, and a control device, connected to the heating devices and the device configured to produce the gas atmosphere, the control device configured to control the heating devices and the device configured to produce the gas atmosphere in such a way that the plurality of substrates during the cleaning operation and during a subsequent transport step of the cleaned plurality of substrates from the first reactor into the second reactor are moved or stored in an interruption-free manner in a reducing gas atmosphere as long as the substrate temperature is above a critical temperature Tc which is dependent on a substrate material of the plurality of substrates and a material of the at least one layer to be deposited.