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1. A film forming composition for a film capacitor, said composition comprises a thermoplastic resin (A) and surface-treated high dielectric inorganic particles (B) obtained by treating surfaces of high dielectric inorganic particles (b1) having a dielectric constant (20° C., 1 kHz) of 100 or more with a low dielectric compound (b2) having a dielectric constant (20° C., 1 kHz) of 10 or less, said low dielectric compound (b2) being at least one organic compound selected from the group consisting of an organotitanium compound, an organosilane compound, an organozirconium compound, an organoaluminum compound and an organic phosphorus compound, and a blended amount of said low dielectric compound (b2) being 0.1 to 20 parts by mass based on 100 parts by mass of the high dielectric inorganic particles (b1),
said organotitanium compound is alkoxy titanium, titanium chelate or titanium acylate, said organosilane compound is monoalkoxysilane, dialkoxysilane, trialkoxysilane, tetraalkoxysilane, vinylsilane, epoxysilane, aminosilane, metachloxysilane or mercaptosilane, said organic zirconium compound is alkoxyzirconium or zirconium chelate, said organoaluminum compound is alkoxyaluminum or aluminum chelate, and said organic phosphorus compound is phosphorous acid ester, phosphoric acid ester or phosphoric acid chelate. |
