发明名称 Semiconductor device and method of forming interposer frame electrically connected to embedded semiconductor die
摘要 A semiconductor device has an interposer frame mounted over a carrier. A semiconductor die has an active surface and bumps formed over the active surface. The semiconductor die can be mounted within a die opening of the interposer frame or over the interposer frame. Stacked semiconductor die can also be mounted within the die opening of the interposer frame or over the interposer frame. Bond wires or bumps are formed between the semiconductor die and interposer frame. An encapsulant is deposited over the interposer frame and semiconductor die. An interconnect structure is formed over the encapsulant and bumps of the first semiconductor die. An electronic component, such as a discrete passive device, semiconductor die, or stacked semiconductor die, is mounted over the semiconductor die and interposer frame. The electronic component has an I/O count less than an I/O count of the semiconductor die.
申请公布号 US8932907(B2) 申请公布日期 2015.01.13
申请号 US201213714061 申请日期 2012.12.13
申请人 STATS ChipPAC, Ltd. 发明人 Cho NamJu;Chi HeeJo;Shin HanGil
分类号 H01L21/44;H01L23/498;H01L21/56;H01L21/683;H01L23/13;H01L23/00;H01L25/065;H01L23/29;H01L23/31;H05K3/00 主分类号 H01L21/44
代理机构 Patent Law Group: Atkins and Associates, P.C. 代理人 Atkins Robert D.;Patent Law Group: Atkins and Associates, P.C.
主权项 1. A method of making a semiconductor device, comprising: providing an interposer substrate; providing a first semiconductor die; forming a bump over a surface of the first semiconductor die; disposing the first semiconductor die within an opening in the interposer substrate; forming a bond wire between the first semiconductor die and interposer substrate including a loop height of the bond wire less than a height of the bump; and depositing an encapsulant over the interposer substrate, first semiconductor die, and bump including a height of the encapsulant from the surface of the first semiconductor die greater than the loop height of the bond wire and less than or equal to the height of the bump.
地址 SG