Phase change memory and method of fabricating same

摘要

A fine pitch phase change random access memory (“PCRAM”) design and method of fabricating same are disclosed. One embodiment is a phase change memory (“PCM”) cell comprising a spacer defining a rectangular reaction area and a phase change material layer disposed within the reaction area. The PCM cell further comprises a protection layer disposed over the GST film layer and within the area defined by the spacer; and a capping layer disposed over the protection layer and the spacer.

主权项

1. A method of fabricating a phase change memory (“PCM”) device comprising an interlayer dielectric (“ILD”) layer having electrodes disposed at opposite ends thereof, the method comprising:
defining a first area on a top surface of the ILD layer using a hard mask; creating a spacer along an inner edge of the hard mask layer and an outer edge of the first area to define a second area; depositing a phase change material layer within the second area; depositing a protection layer over the phase change material layer; isolating the phase change material layer; and depositing a capping layer over the device.