发明名称 |
Photolithography scheme using a silicon containing resist |
摘要 |
A method for forming a patterned amorphous carbon layer in a semiconductor stack, including forming an amorphous carbon layer on a substrate and forming a silicon containing photoresist layer on top of the amorphous carbon layer. Thereafter, the method includes developing a pattern transferred into the resist layer with a photolithographic process and etching through the amorphous carbon layer in at least one region defined by the pattern in the resist layer, wherein a resist layer hard mask is formed in an outer portion of the photoresist layer during etching.
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申请公布号 |
US2002001778(A1) |
申请公布日期 |
2002.01.03 |
申请号 |
US20010921938 |
申请日期 |
2001.08.02 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
LATCHFORD IAN;BENCHER CHRISTOPHER DENNIS;WANG YUXIANG;SILVETTI MARIO DAVE |
分类号 |
B01J19/08;C23C16/26;C23C16/46;G03C5/00;G03F7/075;G03F7/09;H01L21/027;H01L21/283;H01L21/311;H01L21/312;H01L21/314;H01L21/316;H01L21/3205;H01L21/768;(IPC1-7):G03F7/26 |
主分类号 |
B01J19/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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