| 发明名称 |
Method of manufacturing a capacitor in a semiconductor device |
| 摘要 |
A method of manufacturing a capacitor in a semiconductor device wherein a first a Ru film used as a lower electrode is deposited by an LPCVD method, a mixed plasma process of Ar and H2 is performed, and a second Ru film is deposited by an LPCVD method, thus improving the surface roughness of the Ru film. The method can obtain a high capacitance and a low leakage current in a capacitor using a Ta2O5 film as a dielectric film.
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| 申请公布号 |
US2002001893(A1) |
申请公布日期 |
2002.01.03 |
| 申请号 |
US20010852929 |
申请日期 |
2001.05.10 |
| 申请人 |
KIM KYONG MIN;SONG HAN SANG;KIM DONG JUN |
发明人 |
KIM KYONG MIN;SONG HAN SANG;KIM DONG JUN |
| 分类号 |
H01L21/285;H01L21/02;H01L21/28;H01L21/316;H01L21/822;H01L21/8242;H01L27/04;H01L27/108;(IPC1-7):H01L21/823 |
主分类号 |
H01L21/285 |
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