| 摘要 |
<p>The present invention relates to a semiconductor memory device and an operation method thereof. According to an embodiment of the present invention, the operation method of the semiconductor memory device including multiple memory cells laminated on a substrate includes the steps of: applying a reference voltage to a non-selected drain select line; applying a power supply voltage to a selected drain select line; and applying a word-line voltage to a normal word-line. Before the word-line is applied to the normal word-line, a positive voltage is applied to a dummy word line to bounce the non-selected drain select line. The present invention can repress the Y-disturbance on the non-selected drain select line.</p> |
