发明名称 ETCHING METHOD, AND METHOD OF PRODUCING SEMICONDUCTOR SUBSTRATE PRODUCT AND SEMICONDUCTOR DEVICE USING THE SAME, AS WELL AS KIT FOR PREPARATION OF ETCHING LIQUID
摘要 A method of etching a semiconductor substrate, having the steps of: preparing an etching liquid by mixing a first liquid with a second liquid to be in the range of pH from 8.5 to 14, the first liquid containing a basic compound, the second liquid containing an oxidizing agent; and then applying the etching liquid to a semiconductor substrate on a timely basis for etching a Ti-containing layer in or on the semiconductor substrate.
申请公布号 KR20150004411(A) 申请公布日期 2015.01.12
申请号 KR20147033398 申请日期 2013.07.17
申请人 FUJIFILM CORPORATION 发明人 KAMIMURA TETSUYA;INABA TADASHI;MURO NAOTSUGU;NISHIWAKI YOSHINORI
分类号 H01L21/306 主分类号 H01L21/306
代理机构 代理人
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