CONTROL AND STABILISATION OF POST DIFFUSION (ANTINOMY DIFFUSION) COOLING OF LOW-VOLTAGE (~6 V) SILICON PLANAR STRUCTURES OF VRD AND DEVICE TO THIS END

摘要

FIELD: process engineering.SUBSTANCE: invention relates to solid-state microelectronics, particularly, to making of p-n-junctions in silicon by "sealed tube" tube, that is, evacuated sealed quartz ampoule. Here, after high-temperature diffusion annealing of said ampoule it is subjected to forced cooling by definite amount of water kept at definite temperature.EFFECT: reproducible conditions of breakdown voltages in LV p-n-junctions, hence, higher yield of devices.3 cl, 6 dwg