SILICON SINGLE CRYSTAL PULLING DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a silicon single crystal pulling device capable of preventing the direct metal contamination mediated by the vapor phase of Si single crystal being grown. SOLUTION: A cylindrical tube 14 made of high purity quartz glass, which has a length ranges from the upper end of a pulling tube 1a to the vicinity of the surface of Si melt 10 in a crucible 3 and surrounds the Si single crystal 13 being grown, is arranged in a chamber 1.