发明名称 Substrate processing apparatus and method for manufacturing a semiconductor device employing same
摘要 In a substrate processing apparatus including a processing chamber for forming a processing room, a susceptor for supporting a substrate to be processed and a susceptor rotating unit for rotating the susceptor, the susceptor rotating unit includes a permanent magnet coupled with the susceptor and an electromagnet coupled with the processing chamber, wherein there is a spacing between the permanent magnet and the electromagnet. In the substrate processing apparatus, the inner part of the processing chamber is isolated from the atmosphere of the susceptor by the spacing between the permanent magnet and the electromagnet; and the susceptor is directly rotated by rotating the permanent magnet under a magnetic field formed by the electromagnet.
申请公布号 US2002094600(A1) 申请公布日期 2002.07.18
申请号 US20020046255 申请日期 2002.01.16
申请人 HITACHI KOKUSAI ELECTRIC INC. 发明人 ABURATANI YUKINORI;MIYATA TOSHIMITSU
分类号 C23C16/44;C23C16/458;H01L21/205;H01L21/31;H01L21/687;(IPC1-7):H01L21/44 主分类号 C23C16/44
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