SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To provide a structure of a semiconductor device and a manufacturing method therefor for realizing low power consumption and improvement in a yield and reliability, even if the screen is made into a large image surface. SOLUTION: A plating treatment electrode 805 provided with source wiring 802 and terminal parts 808, 809 is formed on a substrate. By using this plating treatment electrode 805, the source wiring 802 and the terminal parts 808, 809 are plated with Cu by plating treatment. Thus, an increase in wiring resistance due to upsizing of the screen is suppressed, and power consumption can be reduced.