发明名称 APPLICATION LIQUID FOR SILICA-BASED COATING FILM FORMATION, METHOD FOR MANUFACTURING SILICA-BASED COATING FILM, AND SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide an application liquid for forming a silica-based coating film for providing an insulating film excellent in mechanical properties and adhesiveness and low in specific inductive capacity, a high-yield method for easily manufacturing a silica-based coating film for providing an insulating film excellent in mechanical properties and adhesiveness and low in specific inductive capacity, and a semiconductor device low in specific inductive capacity and high in reliability. SOLUTION: The application liquid for forming silica-based coating film contains (A) an organic substituent-containing hydrolyzed siloxane polymer (wherein 1-30% of all the organic substituents in the hydrolyzed siloxane polymer must be pyrolyzed in the silica-based coating film manufacturing process), (B) a pyrolytic/volatile organic polymer for pore formation, and (C) an organic solvent capable of dissolving both (A) and (B). The application liquid has a critical surface tension of 29×10-3 N/m or higher and a specific inductive capacity of 2.6 or less as measured at 10 kHz. The application liquid is applied onto a substrate, and allowed to dry at 50-450 deg.C and to set at 200-600 deg.C. The semiconductor device has a silica-based coating film formed by the silica-based coating film manufacturing method.
申请公布号 JP2002201415(A) 申请公布日期 2002.07.19
申请号 JP20000399807 申请日期 2000.12.28
申请人 HITACHI CHEM CO LTD 发明人 ENOMOTO KAZUHIRO;ABE KOICHI
分类号 B05D5/12;B05D7/24;C09D183/02;C09D183/04;C09D201/00;(IPC1-7):C09D183/04 主分类号 B05D5/12
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