| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device including an MOS transistor, which can be used even for a case wherein a potential of a source terminal and a potential of a drain terminal are reversed, while restraining an increase of an ON resistance. SOLUTION: The device has a DMOS M1 having a source terminal S, a drain terminal D, a gate terminal G and a back gate terminal B; and first and second level shift circuits 1, 2 which are connected between the source terminal S and the back gate terminal B in series, and carry out level shift for the potential of the source terminal S and the potential of the back gate terminal B mutually in the same direction by almost the same potential, while blocking a through current flowing between the source terminal S and the back gate terminal B.
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