| 摘要 |
<p>A plasma ashing process apparatus using heterogeneous plasma multiple connection and a method thereof are disclosed. A plasma ashing process using heterogeneous plasma multiple connection according to the present invention includes the steps of: a) forming plasma A in a reaction chamber based on NH_3 gas; b) forming plasma A based on NH_3 gas and having a degree of dissociation different from that of the plasma A in a reactor connected to the reaction chamber through a plasma connecting channel; and c) performing an etching process with plasma A+A which is a combination of mutually different plasmas in the reaction chamber. Thus, the properties required to each gas are independently controlled in each reactor according to the process characteristics and a quantity of radical dissociated in two stages is increased by connecting heterogeneous plasmas in the final reaction chamber, so that the ashing process effect can be maximized.</p> |
