| 摘要 |
<p>Disclosed is a nitride based semiconductor device. A nitride based semiconductor device according to the present invention includes a first nitride layer which operates as a drain doped by a predetermined first doping, a second nitride layer which is arranged in the upper part of the first nitride layer and includes a 2-dimensional electron gas (2DEG) layer, a third nitride layer which is arranged in the upper part of the second nitride layer by alternately performing the first doping and a second doping different from the first doping, a forth nitride layer which is arranged in the upper part of the third nitride layer and includes a 2-dimensional electron gas layer, and a gate electrode arranged on the third nitride layer.</p> |
