| 发明名称 |
EPITAXY SUBSTRATE, METHOD FOR PRODUCING AN EPITAXY SUBSTRATE AND OPTOELECTRONIC SEMICONDUCTOR CHIP COMPRISING AN EPITAXY SUBSTRATE |
| 摘要 |
An epitaxy substrate (11, 12, 13) for a nitride compound semiconductor material is specified, which has a nucleation layer (2) directly on a substrate (1) wherein the nucleation layer (2) has at least one first layer (21) composed of AlON with a column structure. A method for producing an epitaxy substrate and an optoelectronic semiconductor chip comprising an epitaxy substrate are furthermore specified. |
| 申请公布号 |
KR20150003788(A) |
申请公布日期 |
2015.01.09 |
| 申请号 |
KR20147030905 |
申请日期 |
2013.04.24 |
| 申请人 |
OSRAM OPTO SEMICONDUCTORS GMBH |
发明人 |
HERTKORN JOACHIM;FREY ALEXANDER;SCHMID CHRISTIAN |
| 分类号 |
H01L21/20;H01L21/02 |
主分类号 |
H01L21/20 |
| 代理机构 |
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