FINFET Device Having A Channel Defined In A Diamond-Like Shape Semiconductor Structure

摘要

The present disclosure provides a FinFET device. The FinFET device comprises a semiconductor substrate of a first semiconductor material; a fin structure of the first semiconductor material overlying the semiconductor substrate, wherein the fin structure has a top surface of a first crystal plane orientation; a diamond-like shape structure of a second semiconductor material disposed over the top surface of the fin structure, wherein the diamond-like shape structure has at least one surface of a second crystal plane orientation; a gate structure disposed over the diamond-like shape structure, wherein the gate structure separates a source region and a drain region; and a channel region defined in the diamond-like shape structure between the source and drain regions.

主权项

1. A method comprising:
providing a substrate of a first semiconductor material, wherein the substrate has a fin structure of the first semiconductor material disposed between an isolation feature; recessing the fin structure to form a trench, wherein the recessed fin structure has a surface having a (100) crystallographic orientation; and epitaxially growing a second semiconductor material from the surface of the recessed fin structure within the trench, thereby forming a diamond-like shape semiconductor structure over the fin structure, wherein the diamond-like shape semiconductor structure has at least one facet having a (111) crystallographic orientation.