| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a transfer mask blank and a transfer blank capable of easily setting a stress of a silicon membrane to a suitable value and easily suppressing a warp of a pattern or a deformation of a pattern. SOLUTION: The transfer mask blank comprises a supporting base having a strut, the silicon membrane formed with the pattern, and a silicon oxide layer provided between the base and the membrane. In this blank, a mean value of a phosphorus concentration in the membrane is in a range of 5×10<18> to 1×10<20> atoms/cm<3> , and uniformity of the phosphorus concentration in the membrane is within 20% or less.</p> |
