| 发明名称 |
SEMICONDUCTOR DEVICE |
| 摘要 |
A semiconductor device includes: a substrate; a first active region formed in the substrate and that includes a first region that has a first width and a second region including a second width larger than the first width and extended in a first direction; a second active region formed in the substrate and extended in parallel to the second region of the first active region; and an element isolation insulating film formed in the substrate and that partitions the first active region and the second active region, respectively, wherein the second region of the first active region or the second active region includes a depressed part depressed in a second direction that is perpendicular to the first direction in a plan view. |
| 申请公布号 |
US2015008526(A1) |
申请公布日期 |
2015.01.08 |
| 申请号 |
US201414313529 |
申请日期 |
2014.06.24 |
| 申请人 |
FUJITSU SEMICONDUCTOR LIMITED |
发明人 |
Yasuda Makoto;Ema Taiji;Hori Mitsuaki;Fujita Kazushi |
| 分类号 |
H01L29/06;H01L27/088 |
主分类号 |
H01L29/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a substrate; a first active region formed in the substrate and that includes a first region that has a first width and a second region that has a second width larger than the first width and extended in a first direction; a second active region formed in the substrate and extended in parallel to the second region of the first active region; and an element isolation insulating film formed in the substrate and that partitions the first active region and the second active region, respectively, wherein the second region of the first active region or the second active region includes a depressed part depressed in a second direction that is perpendicular to the first direction in a plan view. |
| 地址 |
Yokohama-shi JP |
