发明名称 |
Al-N-BASED LIGHT ABSORBER AND METHOD FOR PRODUCING THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To provide an Al-N-based light absorber having good fixability and a low material cost and capable of exhibiting high absorption in a wide band and to provide a method for producing the absorber. SOLUTION: A film 4 of <=1μm thickness which absorbs almost all of light in the ultraviolet, visible and near infrared wavelength regions is deposited by using a parallel flat plate type sputtering apparatus with Al as a target material, using a gaseous Ar-N2 mixture as a sputtering gas 3 and controlling the mixing ratio and deposition time (film thickness).
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申请公布号 |
JP2002277627(A) |
申请公布日期 |
2002.09.25 |
申请号 |
JP20010367081 |
申请日期 |
2001.11.30 |
申请人 |
JAPAN SCIENCE & TECHNOLOGY CORP |
发明人 |
ISHIGURO TAKASHI |
分类号 |
G02B5/00;C23C14/34;G02B5/22;(IPC1-7):G02B5/22 |
主分类号 |
G02B5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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