发明名称 SEMICONDUCTOR DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To provide a light-emitting device in which a plurality of kinds of circuits are formed on the same substrate, and a plurality of kinds of thin film transistors are provided so as to correspond to characteristics of the plural kinds of the circuits.SOLUTION: As a thin film transistor for a pixel, an inverted coplanar thin transistor comprising an oxide semiconductor layer overlapping a source electrode layer and a drain electrode layer is used. As a thin film transistor for a driver circuit, a channel-etch type thin film transistor is used. At a position which overlaps a light-emitting element electrically connected to the thin film transistor for a pixel, a color filter layer is formed between the thin film transistor and the light-emitting element.</p>
申请公布号 JP2015004978(A) 申请公布日期 2015.01.08
申请号 JP20140147611 申请日期 2014.07.18
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 SAKAKURA MASAYUKI;OIKAWA YOSHIAKI;YAMAZAKI SHUNPEI;SAKATA JUNICHIRO;TSUBUKI MASASHI;AKIMOTO KENGO;HOSOHANE MIYUKI
分类号 G09F9/30;H01L21/336;H01L21/8234;H01L27/08;H01L27/088;H01L27/32;H01L29/786;H01L51/50 主分类号 G09F9/30
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