发明名称 |
TRANSPARENT CONDUCTIVE LAMINATE, METHOD FOR PRODUCTION OF SAME, ELECTRONIC PAPER USING SAME AND TOUCH PANEL USING SAME |
摘要 |
A transparent electroconductive laminate in which condition [A] and/or [B] is satisfied; and the proportion of the surface resistance value after being subjected to a 1-hour wet heat treatment at 60° C. and a relative humidity of 90% and then being left standing for 3 minutes at 25° C. and a relative humidity of 50%, relative to the surface resistance value before the treatment, is 0.7 to 1.3. A method for manufacturing same, electronic paper using same, and a touch panel using same. [A] The white reflectance is from greater than 70% and to no greater than 85%, and the surface resistance value is 1.0×102Ω/□ to 1.0×104Ω/□. [B] The total light transmittance is greater than 88% and no greater than 93%, and the surface resistance value is 1.0×102Ω/□ to 1.0×104Ω/□. |
申请公布号 |
US2015010749(A1) |
申请公布日期 |
2015.01.08 |
申请号 |
US201314375340 |
申请日期 |
2013.01.28 |
申请人 |
TORAY INDUSTRIES, INC. |
发明人 |
Oi Takashi;Watanbe Osamu;Imazu Naoki |
分类号 |
H01B1/04;G06F3/041;H01B13/30;G02F1/1343 |
主分类号 |
H01B1/04 |
代理机构 |
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代理人 |
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主权项 |
1. A transparent conductive laminate which comprises an undercoat layer containing an inorganic oxide and a conductive layer containing a carbon nanotube in this order on a transparent substrate, wherein at least one of the following conditions [A] and [B] is satisfied and the ratio of the surface resistance after subjecting the transparent conductive laminate to a 1-hour moist-heat treatment at a temperature of 60° C. and a relative humidity of 90% and then leaving the resultant to stand for 3 minutes at a temperature of 25° C. and a relative humidity of 50% is 0.7 to 1.3 with respect to the surface resistance prior to the treatment:
[A] the white reflectance is more than 70% and not more than 85% and the surface resistance is not less than 1.0×102Ω/□ and not more than 1.0×104Ω/□; and [B] the total light transmittance is more than 88% and not more than 93%, and the surface resistance is not less than 1.0×102Ω/□ and not more than 1.0×104Ω/□. |
地址 |
TOKYO JP |