TRENCH TYPE POWER SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

摘要

A trench type semiconductor power device is disclosed. An epitaxial layer is formed on a semiconductor substrate. A gate trench is formed in the epitaxial layer. A gate oxide layer and a trench gate are formed in the gate trench. A spacer is provided on the gate. A metal top structure on the gate is separated from a contact structure by the spacer. The contact structure extends into the epitaxial layer. A source doping region is provided in the epitaxial layer at least between the contact structure and the gate trench.

主权项

1. A trench type power semiconductor device, comprising:
a semiconductor substrate having a first conductivity type; an epitaxial layer on the semiconductor substrate; at least one gate trench extending into the epitaxial layer; a gate oxide layer in the gate trench; a gate in the gate trench, wherein the gate protrudes from a top surface of the epitaxial layer and has recessed structure at its top portion; a spacer on a sidewall the gate; a metal top structure within the recessed structure; a contact structure on one side of the spacer and extending into the epitaxial layer, wherein the spacer separates the metal top structure from the contact structure; and a source doping region in the epitaxial layer between the contact structure and the gate trench, wherein the source doping region has the first conductivity type.