| 发明名称 |
Silicon Carbide Device and a Method for Manufacturing A Silicon Carbide Device |
| 摘要 |
A silicon carbide device includes an epitaxial silicon carbide layer having a first conductivity type and a buried lateral silicon carbide edge termination region within the epitaxial silicon carbide layer and having a second conductivity type. The buried lateral silicon carbide edge termination region is covered by a silicon carbide surface layer including a doping of ions of a transition metal or including an increased density of intrinsic point defects in comparison to a density of intrinsic point defects of the buried lateral silicon carbide edge termination region. |
| 申请公布号 |
US2015008447(A1) |
申请公布日期 |
2015.01.08 |
| 申请号 |
US201313933686 |
申请日期 |
2013.07.02 |
| 申请人 |
Infineon Technologies AG |
发明人 |
Rupp Roland;Hecht Christian;Zippelius Bernd Leonhard |
| 分类号 |
H01L29/06;H01L29/16;H01L21/02 |
主分类号 |
H01L29/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A silicon carbide device, comprising:
an epitaxial silicon carbide layer comprising a first conductivity type; and a buried lateral silicon carbide edge termination region located within the epitaxial silicon carbide layer comprising a second conductivity type, wherein the buried lateral silicon carbide edge termination region is covered by a silicon carbide surface layer comprising a doping of ions of a transition metal or an increased density of intrinsic point defects in comparison to a density of intrinsic point defects of the buried lateral silicon carbide edge termination region. |
| 地址 |
Neubiberg DE |
