SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device that can be miniaturized or highly integrated.SOLUTION: A first trench and a second trench are formed in an insulation layer. A transistor having an oxide semiconductor layer in the first trench is formed, and a capacitive element is formed to overlap with the second trench. A first gate electrode is formed in an upper layer of the first trench, and a second gate electrode is formed in a lower layer of the first trench. It is possible to increase the capacitance value of the capacitive element without increasing the occupied area in a planer view because the capacitive element is formed to overlap with the second trench.