| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma processing device that is able to ensure the uniformity of processing within a substrate face.SOLUTION: An upper electrode 3 has a rectangular shape, which has long sides 3a and short sides 3b. In the upper electrode 3, a power supply part P1, to which high frequency power is supplied from a high frequency power source 7 via a power supply line 71, and a connection part P2, to which an impedance adjustment device 9 is connected via electric wiring 91, are formed opposite each other having between them the face 37 of the upper electrode 3, which the face 37 is opposite the lower electrode 5. The power supply part P1 and the connection part P2 are both provided on the long sides 3a of the upper electrode 3. |
