| 主权项 |
1. A CMOS image sensor including a pixel region including a plurality of pixels, and a circuit region, the pixel region comprising:
a light-receiving section arranged in a substrate; a wiring structure arranged above the substrate, and including a plurality of wiring layers and a plurality of interlayer insulating layers; a first layer comprising Si and O, and arranged between the light-receiving section and the wiring structure; a second layer comprising Si and N, and arranged between the first layer and the wiring structure; a third layer comprising Si, N and O above an upper most interlayer insulating layer of the plurality of interlayer insulating layers, and a fourth layer comprising Si and N, arranged above the third layer and has a concentration of N more than that in the third layer. |
