| 发明名称 |
ION MILLING DEVICE |
| 摘要 |
The present invention aims at providing an ion milling device that can set a high-precision processing area with a simple structure. In order to achieve the above object, there is proposed an ion milling device including a sample holder that holds a sample and a mask partially restricting irradiation of the sample with an ion beam, in which the sample holder includes a first contact surface that contacts with an end surface of the sample located on a passing orbit side of the ion beam, and a second contact surface that contacts with an end surface of the mask so that the mask is located at a position spaced apart from the ion beam more than the first contact surface. |
| 申请公布号 |
US2015008121(A1) |
申请公布日期 |
2015.01.08 |
| 申请号 |
US201314379805 |
申请日期 |
2013.02.18 |
| 申请人 |
Hitachi High-Technologies Corporation |
发明人 |
Kamino Atsushi;Takasu Hisayuki;Muto Hirobumi;Iwaya Toru |
| 分类号 |
C23C14/30;H01J37/305 |
主分类号 |
C23C14/30 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An ion milling device comprising:
an ion source for irradiating a sample with an ion beam; and a sample stage disposed within a vacuum chamber for the sample to be irradiated with the ion beam, wherein a sample holder that holds the sample, and a mask that partially limits irradiation of the sample with the ion beam is provided, and the sample holder includes a first contact surface that contacts with an end surface of the sample located on a passing orbit side of the ion beam, and a second contact surface that contacts with an end surface of the mask so that the mask is located at a position spaced apart from the ion beam more than the first contact surface. |
| 地址 |
Minato-ku, Tokyo JP |
