BIPOLAR JUNCTION TRANSISTOR WITH MULTIPLE EMITTER FINGERS

摘要

Bipolar junction transistors and design structures for a bipolar junction transistor. The bipolar junction transistor may include a plurality of emitters that are arranged in distinct emitter fingers. A silicide layer is formed that covers an extrinsic base layer of the bipolar junction transistor and that fills the gaps between adjacent emitters. Non-conductive spacers on the emitter sidewalls electrically insulate the emitters from the silicide layer. The emitters extend through the extrinsic base layer and the silicide layer to contact the intrinsic base layer. The emitters may be formed using sacrificial emitter pedestals in a replacement-type process.

主权项

1. A bipolar junction transistor comprising:
an intrinsic base layer; a silicide layer; an extrinsic base layer vertically between the intrinsic base layer and the silicide layer; and a plurality of emitters extending through the silicide layer and the extrinsic base layer to the intrinsic base layer.