| 摘要 |
PROBLEM TO BE SOLVED: To provide a diode in which initial voltage VF and ON resistance are reduced. ! SOLUTION: A diode 100 includes: a substrate 10; a first nitride semiconductor layer 122B; a second nitride semiconductor layer 122A formed on the first nitride semiconductor layer 122B and having a large band gap as compared with the first nitride semiconductor layer 122B; an anode electrode 131 and a cathode electrode 132; and a first p-type nitride semiconductor layer 123 formed on the second nitride semiconductor layer 122A between the anode electrode 131 and the cathode electrode 132 and connected to the anode electrode 131. In the diode 100, when voltage allowing a current to flow between the anode electrode 131 and the cathode electrode 132 is applied to the anode electrode 131, voltage on the anode side of a 2DEG channel formed in the first nitride semiconductor layer 122B just under the first p-type nitride semiconductor layer 123 is set lower than anode voltage. ! COPYRIGHT: (C)2015,JPO&INPIT |
