发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device which enables assuring of insulation property when used at a high voltage and enables decreasing of heat resistance. ! SOLUTION: In a semiconductor device, which has a structure in which a first heat diffusion layer 6 is sandwiched between insulating layers 5, 7, or first and second layers, the two layers, or the insulating layers 5, 7 assure electrical insulation property when used at a high voltage, and further, the first heat diffusion layer 6 promotes heat diffusion in the direction along surfaces of the layers 5-6 for reducing heat resistance. ! COPYRIGHT: (C)2015,JPO&INPIT
申请公布号 JP2015005570(A) 申请公布日期 2015.01.08
申请号 JP20130128774 申请日期 2013.06.19
申请人 KANSAI ELECTRIC POWER CO INC 发明人 HAYASHI TOSHIHIKO ; ITSUMI TETSURO ; IZUMI TORU ; ASANO KATSUNORI
分类号 H01L23/36;H01L23/12;H01L23/13 主分类号 H01L23/36
代理机构 代理人
主权项
地址