发明名称 |
Method Of Making A Three-Dimensional Memory Array With Etch Stop |
摘要 |
A method of making a semiconductor device including forming a sacrificial feature over a substrate, forming a plurality of etch through regions having an etch through material and an etch stop region having an etch stop material over the sacrificial feature, forming a stack of alternating layers of a first material and a second material over the plurality of the etch through regions and the plurality of the etch stop regions, etching the stack to form a plurality of openings through the stack and through the etch through regions to expose the sacrificial feature, such that the etch through material is etched preferentially compared to the first and the second materials of the stack, removing the sacrificial feature through the plurality of openings and etching the stack to form a slit trench up to or only partially through the etch stop region, such that the first and the second materials of the stack are etched preferentially compared to the etch stop material. |
申请公布号 |
US2015008503(A1) |
申请公布日期 |
2015.01.08 |
申请号 |
US201313933236 |
申请日期 |
2013.07.02 |
申请人 |
SanDisk Technologies, Inc. |
发明人 |
MAKALA Raghuveer S.;ALSMEIER Johann;LEE Yao-Sheng;TERAHARA Masanori;WATATANI Hirofumi;PACHAMUTHU Jayavel |
分类号 |
H01L27/115 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
1. A method of making a semiconductor device, comprising:
forming a sacrificial feature over a substrate; forming a plurality of etch through regions comprising an etch through material and an etch stop region comprising an etch stop material over the sacrificial feature; forming a stack of alternating layers of a first material and a second material over the plurality of the etch through regions and the plurality of the etch stop regions; etching the stack to form a plurality of openings through the stack and through the etch through regions to expose the sacrificial feature, such that the etch through material is etched preferentially compared to the first and the second materials of the stack; removing the sacrificial feature through the plurality of openings; and etching the stack to form a slit trench up to or only partially through the etch stop region, such that the first and the second materials of the stack are etched preferentially compared to the etch stop material. |
地址 |
Plano TX US |